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Microscopic annealing process and its impact on superconductivity in T'-structure electron-doped copper oxides

机译:微观退火工艺及其对超导电性的影响   T'结构电子掺杂的铜氧化物

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摘要

High-transition-temperature superconductivity arises in copper oxides whenholes or electrons are doped into the CuO2 planes of their insulating parentcompounds. While hole-doping quickly induces metallic behavior andsuperconductivity in many cuprates, electron-doping alone is insufficient inmaterials such as R2CuO4 (R is Nd, Pr, La, Ce, etc.), where it is necessary toanneal an as-grown sample in a low-oxygen environment to remove a tiny amountof oxygen in order to induce superconductivity. Here we show that themicroscopic process of oxygen reduction repairs Cu deficiencies in the as-grownmaterials and creates oxygen vacancies in the stoichiometric CuO2 planes,effectively reducing disorder and providing itinerant carriers forsuperconductivity. The resolution of this long-standing materials issuesuggests that the fundamental mechanism for superconductivity is the same forelectron- and hole-doped copper oxides.
机译:当空穴或电子被掺杂到它们的绝缘母体化合物的CuO2平面中时,高转变温度超导电性会在铜氧化物中产生。尽管空穴掺杂会在许多铜酸盐中迅速诱发金属行为和超导性,但仅电子掺杂在诸如R2CuO4(R为Nd,Pr,La,Ce等)之类的材料中是不够的,在这种情况下,必须退火生长的样品。在低氧环境中去除少量氧气以诱导超导。在这里,我们表明,氧还原的微观过程修复了所生长材料中的铜缺陷,并在化学计量的CuO2平面中产生了氧空位,有效地减少了无序度并为超导性提供了流动性载体。这种长期存在的材料的分辨率提出了超导电性的基本机理与电子和空穴掺杂的氧化铜相同的问题。

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